- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96109 > MURS160-E3/2CT (VISHAY SEMICONDUCTORS) 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA PDF資料下載
參數(shù)資料
| 型號(hào)： | MURS160-E3/2CT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 91K |
| 代理商： | MURS160-E3/2CT |
Vishay General Semiconductor
MURS140 & MURS160
Document Number 88688
13-Jul-06
www.vishay.com
1
Surface Mount Ultrafast Plastic Rectifier
FEATURES
Glass passivated chip junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters
and
inverters
for
consumer,
computer
and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high reli-
ability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
DO-214AA (SMB)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
1.0 A
VRRM
400 V, 600 V
IFSM
35 A
trr
50 ns
VF
1.05 V
Tj max.
175 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURS140
MURS160
UNIT
Device marking code
MG
MJ
Maximum repetitive peak reverse voltage
VRRM
400
600
V
Working peak reverse voltage
VRWM
400
600
V
Maximum DC blocking voltage
VDC
400
600
V
Maximum average forward rectified current at (see Fig. 1)
TL = 150 °C
TL = 125 °C
IF(AV)
1.0
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
35
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MURS160T3 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214BA |
| MURS340 | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB |
| MURS320 | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB |
| MV104RLRAG | 39.5 pF, 32 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-92 |
| MV1405 | 250 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-204AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MURS160-FN3 | 制造商:WILLAS 制造商全稱:WILLAS 功能描述:1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V |
| MURS160HE3/2CT | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS160HE3/52T | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS160HE3/55T | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS160HE3/5BT | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。