- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄39988 > MURS120-13-F (DIODES INC) 2 A, 200 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | MURS120-13-F |
| 廠商： | DIODES INC |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 119K |
| 代理商： | MURS120-13-F |
MURS120
1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
Features
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Surge Overload Rating to 40A Peak
Ideally Suited for Automated Assembly
Lead Free Finish/RoHS Compliant Version (Note 5)
Mechanical Data
Case: SMB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solder Plated Terminal - Solderable per
MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish). Please see
Ordering Information, Note 7, on Page 3
Polarity: Cathode Band or Cathode Notch
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.093 grams (approximate)
SMB
Dim
Min
Max
A
3.30
3.94
B
4.06
4.57
C
1.96
2.21
D
0.15
0.31
E
5.00
5.59
G
0.10
0.20
H
0.76
1.52
J
2.00
2.62
All Dimensions in mm
A
B
C
D
G
H
E
J
Maximum Ratings and Electrical Characteristics
@TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DS30179 Rev. 5 - 2
1 of 3
www.diodes.com
MURS120
Diodes Incorporated
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 6)
@ IR = 5uA
VRRM
VRWM
VR
200
V
RMS Reverse Voltage
VR(RMS)
141
V
Average Rectified Output Current
@ TT = 135°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
40
A
Forward Voltage
@ IF = 1.0A, Tj = 25°C
@ IF = 1.0A, Tj = 150°C
VFM
0.875
0.710
V
Peak Reverse Current
@ TA = 25°C
at Rated DC Blocking Voltage
@ TA = 150°C
IRM
2.0
50
μA
Reverse Recovery Time (Note 3)
trr
25
ns
Forward Recovery Time (Note 4)
tfr
25
ns
Typical Total Capacitance (Note 2)
CT
27
pF
Typical Thermal Resistance, Junction to Terminal (Note 1)
RθJT
15
°C/W
Operating Temperature Range
Tj
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +175
°C
Notes:
1.
Unit mounted on PC board with 5.0 mm
2 (0.013 mm thick) copper pads as heat sink.
2.
Measured at 1.0MHz and applied reverse voltage of 4V DC.
3.
Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5.
4.
Measured with IF = 1.0A, di/dt = 100A/μs, Duty Cycle ≤ 2.0%.
5.
R
οHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
6.
Short duration pulse test used to minimize self-heating effect.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MURS120-E3/55T | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA |
| MURS120 | 1 A, 200 V, SILICON, SIGNAL DIODE |
| MURS160-E3/52T | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| MURS160-HE3/5BT | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| MURS140HE3/5BT | 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MURS120-13-F-CUT TAPE | 制造商:DIODES 功能描述:MURS120 Series 200 V 1 A Surface Mount Super-Fast Rectifier - DO-214AA |
| MURS120A | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:ULTRAFAST RECTIFIER VOLTAGE RANGE 200 to 600 Volts CURRENT 1.0 Ampere |
| MURS120CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ULTRAFAST POWER RECTIFIER DIODE IN CERAMIC |
| MURS120-E3/2CT | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120-E3/52T | 功能描述:整流器 1.0 Amp 200V 25ns RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。