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參數(shù)資料
| 型號： | MURS120-E3/55T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 90K |
| 代理商： | MURS120-E3/55T |
Vishay General Semiconductor
MURS120
Document Number 88687
03-Jul-06
www.vishay.com
1
Surface Mount Ultrafast Plastic Rectifier
FEATURES
Glass passivated chip junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters
and
inverters
for
consumer,
computer
and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
DO-214AA (SMB)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
1.0 A
VRRM
200 V
IFSM
40 A
trr
25 ns
VF
0.71 V
Tj max.
175 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Device marking code
MD
Maximum repetitive peak reverse voltage
VRRM
200
V
Working peak reverse voltage
VRWM
200
V
Maximum DC blocking voltage
VDC
200
V
Maximum average forward rectified current at (see Fig. 1)
TL = 155 °C
TL = 145 °C
IF(AV)
1.0
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MURS120 | 1 A, 200 V, SILICON, SIGNAL DIODE |
| MURS160-E3/52T | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| MURS160-HE3/5BT | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| MURS140HE3/5BT | 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA |
| MURS260-E3/5BT | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MURS120HE3/2CT | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120HE3/52T | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120HE3/55T | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120HE3/5BT | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:1A ULTRA FAST RECOVERY SURFACE MOUNT RECTIFIER |
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