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參數(shù)資料
| 型號(hào)： | MURB820-1 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封裝： | TO-262, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 94K |
| 代理商： | MURB820-1 |
Document Number: 93123
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 24-Jun-08
1
Ultrafast Rectifier,
8 A FRED PtTM
MURB820/MURB820-1
Vishay High Power Products
FEATURES
Ultrafast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control,
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
trr
25 ns
IF(AV)
8 A
VR
200 V
MURB820
Anode
1
3
Base
cathode
2
N/C
D2PAK
MURB820-1
TO-262
Anode
1
3
2
N/C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Peak repetitive reverse voltage
VRRM
200
V
Average rectified forward current
IF(AV)
Total device, rated VR, TC = 150 °C
8
A
Non-repetitive peak surge current
IFSM
100
Peak repetitive forward current
IFM
Rated VR, square wave, 20 kHz, TC = 150 °C
16
Operating junction and storage temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 A
200
-
V
Forward voltage
VF
IF = 8 A
-
0.975
IF = 8 A, TJ = 150 °C
-
0.895
Reverse leakage current
IR
VR = VR rated
-
5
A
TJ = 150 °C, VR = VR rated
-
250
Junction capacitance
CT
VR = 200 V
-
25
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MURF820 | 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220 |
| MURP20040CTG | 100 A, 400 V, SILICON, RECTIFIER DIODE |
| MURS120T3 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214BA |
| MURS120 | 1 A, 200 V, SILICON, SIGNAL DIODE |
| MURS160-E3/2CT | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MURB820-1PBF | 制造商:Vishay Angstrohm 功能描述:Diode Switching 200V 8A 3-Pin(3+Tab) TO-262 Tube |
| MURB820-1TRL | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Rectifier, 8 A FRED PtTM |
| MURB820-1TRLPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Rectifier, 8 A FRED Pt |
| MURB820-1TRR | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Rectifier, 8 A FRED PtTM |
| MURB820-1TRRPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Rectifier, 8 A FRED Pt |
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