參數(shù)資料
型號(hào): MUR420-E3/54
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 4 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 62K
代理商: MUR420-E3/54
Document Number: 88685
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 22-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Ultrafast Plastic Rectifier
MUR420
Vishay General Semiconductor
FEATURES
Glass passivated chip junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
4.0 A
VRRM
200 V
IFSM
150 A
trr
25 ns
VF
0.710 V
TJ max.
175 °C
DO-201AD
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
V
Working peak reverse voltage
VRWM
200
V
Maximum DC blocking voltage
VDC
200
V
Maximum average forward rectified current at TA = 80 °C (fig. 1)
IF(AV)
4.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
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