參數(shù)資料
型號(hào): MURB2020CT-1PBF
廠商: VISHAY INTERTECHNOLOGY INC
元件分類: 整流器
英文描述: 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA
封裝: ROHS COMPLIANT, TO-262, 3 PIN
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 107K
代理商: MURB2020CT-1PBF
Document Number: 93915
For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 28-Jul-08
1
Ultrafast Rectifier,
2 x 10 A FRED Pt
MURB2020CT, MURB2020CT-1
Vishay High Power Products
FEATURES
Ultrafast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control,
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
trr
25 ns
IF(AV)
2 x 10 A
VR
200 V
MURB2020CT
Anode
Base
common
cathode
2
D2PAK
MURB2020CT-1
TO-262
Anode
1
3
2
Common
cathode
Anode
Base
common
cathode
2
Anode
1
3
2
Common
cathode
1
2
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Peak repetitive reverse voltage
VRRM
200
V
Average rectified forward current
per leg
IF(AV)
10
A
total device
Rated VR, TC = 145 °C
20
Non-repetitive peak surge current per leg
IFSM
100
Peak repetitive forward current per leg
IFM
Rated VR, square wave, 20 kHz, TC = 145 °C
20
Operating junction and storage temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 A
200
-
V
Forward voltage
VF
IF = 8 A, TJ = 125 °C
-
0.85
IF = 16 A
-
1.15
IF = 16 A, TJ = 125 °C
-
1.05
Reverse leakage current
IR
VR = VR rated
-
15
A
TJ = 150 °C, VR = VR rated
-
250
Junction capacitance
CT
VR = 200 V
-
55
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
相關(guān)PDF資料
PDF描述
MURF1020CT 10 A, SILICON, RECTIFIER DIODE, TO-220AB
MURF1030-BP 10 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC
MURF1040-BP 10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC
MURF1010-BP 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
MURL140 1 A, SILICON, SIGNAL DIODE, DO-213AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MURB2020CT-1TRL 制造商:IRF 制造商全稱:International Rectifier 功能描述:Ultrafast Rectifier
MURB2020CT-1TRLPBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:Ultrafast Rectifier
MURB2020CT-1TRR 制造商:IRF 制造商全稱:International Rectifier 功能描述:Ultrafast Rectifier
MURB2020CT-1TRRPBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:Ultrafast Rectifier
MURB2020CTPBF 功能描述:DIODE ULTRA FAST 200V 10A D2PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 二極管,整流器 - 陣列 系列:FRED Pt™ 其它有關(guān)文件:STTH10LCD06C View All Specifications 標(biāo)準(zhǔn)包裝:1,000 系列:- 電壓 - 在 If 時(shí)為正向 (Vf)(最大):2V @ 5A 電流 - 在 Vr 時(shí)反向漏電:1µA @ 600V 電流 - 平均整流 (Io)(每個(gè)二極管):5A 電壓 - (Vr)(最大):600V 反向恢復(fù)時(shí)間(trr):50ns 二極管類型:標(biāo)準(zhǔn) 速度:快速恢復(fù) = 200mA(Io) 二極管配置:1 對(duì)共陰極 安裝類型:表面貼裝 封裝/外殼:TO-263-3,D²Pak(2 引線+接片),TO-263AB 供應(yīng)商設(shè)備封裝:D2PAK 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1553 (CN2011-ZH PDF) 其它名稱:497-10107-2