參數(shù)資料
型號(hào)： MUN5213T1
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Bias Resistor Transistor(偏置電阻晶體管)
中文描述： 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： CASE 419-04, SC-70, 3 PIN
文件頁(yè)數(shù)： 3/10頁(yè)
文件大?。?/td> 89K
代理商： MUN5213T1
MUN5211T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
CollectorEmitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
EmitterBase Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5236T1
MUN5237T1
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
CollectorBase Breakdown Voltage
(I
C
= 10 A, I
E
= 0)
V
(BR)CBO
50
Vdc
CollectorEmitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5236T1
MUN5237T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
CollectorEmitter Saturation Voltage (I
= 10 mA, I
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA)
(I
C
= 10 mA, I
B
= 1 mA)
MUN5232T1/MUN5233T1/MUN5234T1
MUN5230T1/MUN5231T1
MUN5215T1/MUN5216T1/
V
CE(sat)
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k )
MUN5211T1
MUN5212T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5213T1
MUN5236T1
MUN5237T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k )
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
相關(guān)PDF資料
PDF描述
MUN5214T1 Bias Resistor Transistor(偏置電阻晶體管)
MUN5237DW1T1 Dual Bias Resistor Transistors(雙偏置電阻晶體管)
MUN5332DW1T1 Dual Bias Resistor Transistors(雙偏置電阻晶體管)
MUN5313DW1T1 Dual Bias Resistor Transistors(雙偏置電阻晶體管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MUN5213T1G 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
MUN5213TI 制造商:Rochester Electronics LLC 功能描述:- Bulk
MUN5214 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:NPN Silicon Bias Resistor Transistor
MUN5214DW 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Dual Bias Resistor Transistor
MUN5214DW1T1 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
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