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參數(shù)資料
| 型號： | MUN22xxT1 |
| 廠商： | Motorola, Inc. |
| 英文描述： | NPN SILICON BIAS RESISTOR TRANSISTOR |
| 中文描述： | NPN硅偏置電阻晶體管 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 263K |
| 代理商： | MUN22XXT1 |
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2214T1
10
1
0.10
10
20
30
40
50
100
10
10
2
4
6
8
10
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
15
20
25
30
35
40
45
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
V
I
h
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0
20
40
60
80
VC
Figure 18. DC Current Gain
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
C
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
–25
°
C
25
°
C
TA= 75
°
C
VCE = 10
300
250
200
150
100
50
0
2
4
6
8
15
20 40
50
60
70
80
90
f = 1 MHz
lE = 0 V
TA = 25
°
C
TA= –25
°
C
25
°
C
75
°
C
IC/IB = 10
75
°
C
25
°
C
TA= –25
°
C
VO = 5 V
VO= 0.2 V
TA= –25
°
C
25
°
C
75
°
C
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