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參數(shù)資料
| 型號(hào)： | MUN22xxT1 |
| 廠(chǎng)商： | Motorola, Inc. |
| 英文描述： | NPN SILICON BIAS RESISTOR TRANSISTOR |
| 中文描述： | NPN硅偏置電阻晶體管 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 263K |
| 代理商： | MUN22XXT1 |
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2213T1
V
I
h
Figure 12. VCE(sat) versus IC
0
2
4
6
8
10
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
TA= –25
°
C
75
°
C
25
°
C
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 15. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA= 75
°
C
25
°
C
–25
°
C
100
101
100
Figure 16. Input Voltage versus Output Current
0
20
40
60
80
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
TA= –25
°
C
25
°
C
75
°
C
V
TA= –25
°
C
25
°
C
75
°
C
50
0
10
20
30
40
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25
°
C
VO = 5 V
VO = 0.2 V
IC/IB = 10
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