參數(shù)資料
型號: MUN2133T3
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SC-59, 3 PIN
文件頁數(shù): 12/38頁
文件大?。?/td> 385K
代理商: MUN2133T3
MUN2111T1 SERIES
2–732
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter–Base Cutoff Current
MUN2111T1
(VEB = 6.0 V, IC = 0)
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector–Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
Vdc
Collector–Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS(3)
DC Current Gain
MUN2111T1
(VCE = 10 V, IC = 5.0 mA)
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
hFE
35
60
80
160
3.0
8.0
15
80
60
100
140
250
5.0
15
27
140
130
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
(IC = 10 mA, IB = 5.0 mA)
MUN2131T1
(IC = 10 mA, IB = 1.0 mA)
MUN2116T1
MUN2132T1
MUN2134T1
VCE(sat)
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
MUN2111T1
MUN2112T1
MUN2114T1
VOL
0.2
Vdc
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
MUN2113T1
0.2
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
相關(guān)PDF資料
PDF描述
MUN2130T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN2112T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN2134T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN2131T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN2116T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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