參數(shù)資料
型號(hào)： MUN2134T3
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： SC-59, 3 PIN
文件頁數(shù)： 1/38頁
文件大?。?/td> 385K
代理商： MUN2134T3
PIN3
COLLECTOR
(OUTPUT)
PIN1
EMITTER
(GROUND)
PIN2
BASE
(INPUT)
R1
R2
2–731
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is designed
for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Base Voltage
VCBO
50
Vdc
Collector–Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25
°C
PD
*200
1.6
mW
mW/
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
R
θJA
625
°C/W
Operating and Storage Temperature Range
TJ, Tstg
– 65 to +150
°C
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
TL
260
10
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1(2)
6A
6B
6C
6D
6E
10
22
47
10
22
47
∞
MUN2116T1(2)
MUN2130T1(2)
MUN2131T1(2)
MUN2132T1(2)
MUN2133T1(2)
MUN2134T1(2)
6F
6G
6H
6J
6K
6L
4.7
1.0
2.2
4.7
22
∞
1.0
2.2
4.7
47
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
PNP SILICON
BIAS RESISTOR
TRANSISTOR
Motorola Preferred Devices
CASE 318D–03, STYLE 1
(SC–59)
MUN2111T1
SERIES
2
1
3
REV 5
相關(guān)PDF資料
PDF描述
MUN2131T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN2116T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN2114T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN2111T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN2132T3G 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MUN2135T1G 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Cut TR (SOS) 制造商:ON Semiconductor 功能描述:REEL / PNP DIGITAL TRANSISTOR (B
MUN2136 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon
MUN2136T1 功能描述:TRANS BRT PNP 100MA 50V SC59 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242
MUN2136T1G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bias Resistor Transistors
MUN2137 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon
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