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參數資料
| 型號： | MTW45N10E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | MTW45N10E |
MTW45N10E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
1.5
2.0
3.0
4.0
5.0
0
30
50
70
90
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
3.0
4.0
5.0
7.0
9.0
0
30
50
70
90
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
020
40
60
80
90
0.01
0.03
0.05
0
2040
6080
90
0.022
0.024
0.028
0.032
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
-50
0.4
0.8
1.2
1.6
2.0
0
100
1.0
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
-25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
100°C
TJ = -55°C
TJ = 100°C
25°C
-55°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 22.5 A
7 V
8 V
6 V
5 V
9 V
4 V
80
60
40
10
0.04
0.02
80
60
40
10
0.030
0.026
20
0.5
1.0
2.5
3.5
4.5
2.5
3.5
4.5
6.5
8.0
10
30
50
70
10
30
50
70
20
40
60
80
20
8.5
6.0
7.5
TJ = 125°C
100°C
25°C
5.5
15 V
25°C
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