參數(shù)資料
型號： MTW45N10E
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 45 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
封裝： CASE 340K-01, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 62K
代理商： MTW45N10E
MTW45N10E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
100
–
116
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
10
100
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
–
7.0
4.0
–
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 22.5 Adc)
RDS(on)
–
0.027
0.035
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 45 Adc)
(ID = 22.5 Adc, TJ = 125°C)
VDS(on)
–
1.13
–
2.16
1.53
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 22.5 Adc)
gFS
12
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
3480
5000
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
1240
2000
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
–
315
650
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
–
25
50
ns
Rise Time
(VDD= 50 Vdc, ID = 45 Adc,
VGS =10Vdc
tr
–
234
470
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
–
83
170
Fall Time
RG 9.1 )
tf
–
116
240
Gate Charge
(S
Fi
8)
QT
–
106
220
nC
(See Figure 8)
(VDS = 80 Vdc, ID = 45 Adc,
Q1
–
26
–
(VDS 80 Vdc, ID 45 Adc,
VGS = 10 Vdc)
Q2
–
54
–
Q3
–
44
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 45 Adc, VGS = 0 Vdc)
(IS = 45 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
–
1.09
1.04
1.635
–
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
–
166
–
ns
(See Figure 14)
(IS =45Adc VGS = 0 Vdc
ta
–
118
–
(IS = 45 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
–
48
–
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
–
1.1
–
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
–
4.5
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
–
7.5
–
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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