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參數(shù)資料
| 型號(hào)： | MTW32N20E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
| 中文描述： | 32 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 205K |
| 代理商： | MTW32N20E |
5
Motorola TMOS Power MOSFET Transistor Device Data
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
V
0
QT, TOTAL CHARGE (nC)
V
20
10
20
t
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I
16
12
8
4
0
30
40
50
60
70
Q1
Q2
Q3
1000
100
10
1
RG, GATE RESISTANCE (OHMS)
1
10
100
td(off)
td(on)
0
0.2
0.4
0.6
0.8
1
30
20
10
0
tf
tr
80
90
100
TJ = 25
°
C
ID = 32 A
VDD = 100 V
VGS = 10 V
QT
200
180
160
140
120
100
80
60
40
20
0
2
20
VGS
200
20
2
TJ = 25
°
C
VGS = 0 V
TJ = 25
°
C
ID = 32 A
VDS = 160 V
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous drain–to–source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction tem-
perature and a case temperature (TC) of 25
°
C. Peak repetitive
pulsed power limits are determined by using the thermal re-
sponse data in conjunction with the procedures discussed in
AN569, “Transient Thermal Resistance–General Data and Its
Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10
μ
s. In addition the total power averaged
over a complete switching cycle must not exceed (TJ(MAX) –
TC)/(R
θ
JC).
A Power MOSFET designated E–FET can be safely used in
switching circuits with unclamped inductive loads. For reliable
operation, the stored energy from circuit inductance dissi-
pated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a con-
stant. The energy rating decreases non–linearly with an in-
crease of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 12). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
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| MTW32N25 | TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW32N25E | TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW35N15E | TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTW32N20EG | 功能描述:MOSFET NFET T0247 200V 32A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTW32N25 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW32N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW33N10E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTW35N15E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
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