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參數(shù)資料
| 型號： | MTW24N40E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM |
| 中文描述： | 24 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 174K |
| 代理商： | MTW24N40E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1.0
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
100
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
100
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
700
300
200
100
ID = 24 A
500
1.0
10
150
t, TIME (s)
Figure 13. Thermal Response
r
T
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0.2
0.1
0.05
0.02
D = 0.5
1.0E–05
1.0E–04
1.0E–03
100
μ
s
1 ms
10 ms
DC
400
600
0.01
1.0E–02
1.0E–01
1.0E+00
1.0E+01
0.1
1.0
0.001
0.01
SINGLE PULSE
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