參數(shù)資料
型號(hào): MTW24N40E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM
中文描述: 24 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 174K
代理商: MTW24N40E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
400
360
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
10
100
μ
Adc
IGSS
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
7.0
4.0
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 12 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 24 Adc)
(ID = 12 Adc, TJ =125
°
C)
RDS(on)
VDS(on)
0.13
0.16
Ohm
4.5
4.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc)
gFS
11
17
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
4000
5600
pF
Output Capacitance
530
740
Reverse Transfer Capacitance
112
220
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD 200= Vdc, ID = 24 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
200 Vd
td(on)
tr
td(off)
tf
32
60
ns
Rise Time
96
204
Turn–Off Delay Time
99
194
Fall Time
)
92
186
Gate Charge
(VDS = 320 Vdc, ID = 24 Adc,
VGS = 10 Vdc)
QT
98
160
nC
Q1
Q2
Q3
24
38
40
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 24 Adc, VGS = 0 Vdc)
(IS = 24 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
0.94
0.9
1.5
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 24 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
trr
ta
tb
372
ns
244
,
128
Reverse Recovery Stored Charge
QRR
5.3
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
from package to source bond pad)
LS
13
nH
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
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