參數(shù)資料
型號(hào): MTW20N50E
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 20 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
封裝: CASE 340K-01, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 102K
代理商: MTW20N50E
MTW20N50E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
04
8
12
16
20
0
16
24
32
40
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
2.8
3.6
4.4
5.2
6.0
0
16
24
32
40
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
8
16
24
32
40
0
0.1
0.3
0.4
0.6
0
8
16
24
32
40
0.24
0.26
0.28
0.30
0.34
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0
0.8
1.6
2.4
0
100
200
300
400
500
1
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
100°C
25°C
TJ = 55°C
TJ = 100°C
25°C
55°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
8 V
7 V
6 V
5 V
2
6
10
14
18
8
2.4
3.2
4.0
4.8
5.6
6.8
6.4
0.2
0.5
4
1220
2836
0.32
4
12
202836
0.4
1.2
2.0
50
150
250
350
450
VGS = 10 V
15 V
100°C
25°C
TJ = 125°C
VGS = 10 V
ID = 10 A
9 V
相關(guān)PDF資料
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MTW24N40E 24 A, 400 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
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