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參數(shù)資料
| 型號(hào)： | MTW20N50E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 20 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | MTW20N50E |
MTW20N50E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
500
583
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
7.0
4.0
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 10 Adc)
RDS(on)
0.20
0.24
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
5.75
6.0
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc)
gFS
11
16.2
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
3880
6950
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
452
920
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
96
140
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
td(on)
29
55
ns
Rise Time
(VDD = 250 Vdc, ID = 20 Adc,
VGS =10Vdc
tr
90
165
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
97
190
Fall Time
RG
9.1
)
tf
84
170
Gate Charge
(See Figure 8)
QT
100
132
nC
(VDS = 400 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
Q1
20
VGS = 10 Vdc)
Q2
44
Q3
36
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1.)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.916
0.81
1.1
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
431
ns
(See Figure 14)
(I
20 Adc V
0 Vdc
ta
272
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
159
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
6.67
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
5.0
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
13
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTW24N40E | 24 A, 400 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
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| MTW35N15EG | 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| MTW35N15E | 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| MTW45N10E | 45 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTW23N25E | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
| MTW24N40E | 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
| MTW26N15E | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM |
| MTW2805S | 制造商:INTERPOINT 制造商全稱(chēng):INTERPOINT 功能描述:–55°C to +85°C operation 18 to 40 VDC input 50 V for 50 ms transient protection |
| MTW2805S/ES | 制造商:INTERPOINT 制造商全稱(chēng):INTERPOINT 功能描述:DC/DC CONVERTERS 28 VOLT INPUT |
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