參數(shù)資料
型號(hào): MTW16N40E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
中文描述: 16 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 217K
代理商: MTW16N40E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
0
4
8
12
16
20
25
30
15
2
6
10
14
18
5
7 V
6 V
VGS = 10 V
VDS = 50 V
0
4
6
2
8
25
35
40
20
30
10
0
TJ = –55
°
C
25
°
C
100
°
C
5
15
TJ = 25
°
C
VGS = 10 V
15 V
0.20
0.32
0.24
0
8
32
4
28
VGS = 0 V
0
200
400
100
100
300
350
1.0
50
TJ = 125
°
C
0
5
15
25
0
0.45
0.75
0.6
0.3
0.15
10
20
30
TJ = 100
°
C
25
°
C
–55
°
C
VGS = 10 V
–50
0
0.5
1.0
2.0
3.0
–25
0
25
50
75
100
125
150
VGS = 10 V
ID = 8 A
4.5 V
20
10
10
1000
0.26
0.28
0.30
0.22
12
20
16
24
2.5
1.5
0
100
°
C
6.5 V
8 V
250
150
相關(guān)PDF資料
PDF描述
MTW20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM
MTW23N25E TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM
MTW24N40E TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM
MTW32N20E TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
MTW32N25 TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM
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MTW206N 制造商:Knitter-Switch 功能描述:Bulk
MTW20N20E 制造商:Rochester Electronics LLC 功能描述:- Bulk
MTW20N50E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM
MTW23N25E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM
MTW24N40E 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: