參數(shù)資料
型號(hào): MTW10N100E
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
封裝: CASE 340K-01, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 183K
代理商: MTW10N100E
MTW10N100E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
0
6
12 14
22
30
20
2
8
18
26
4
5 V
6 V
VGS = 10 V
VDS ≥ 10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
TJ = 55°C
25°C
100°C
TJ = 25°C
VGS = 10 V
15 V
1.00
1.40
1.56
1.16
04
16
214
18
VGS = 0 V
0
300
700
1
1000
100000
200
500
1000
900
25°C
TJ = 125°C
0
4
12
16
0
0.8
1.6
2.4
2.0
1.2
0.4
818
20
TJ = 100°C
25°C
55°C
VGS = 10 V
50
0
0.8
1.2
2.0
2.8
25
0
25
50
75
100
125
150
VGS = 10 V
ID = 5 A
4 V
16
8
0
10000
1.32
1.48
1.24
1.08
610
812
20
2.4
1.6
400
600
800
100
100°C
28
24
16
20
410
18
10
2
14
6
I D
,DRAIN
CURRENT
(AMPS)
20
12
4
16
8
0
18
10
2
14
6
5.6
6.0
26
14
10
0.4
10
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