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參數(shù)資料
| 型號(hào)： | MTW10N100E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | MTW10N100E |
MTW10N100E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
1000
1,254
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
7.0
4.0
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 5.0 Adc)
RDS(on)
1.10
1.3
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 10 Adc)
(ID = 5.0 Adc, TJ = 125°C)
VDS(on)
11
15
15.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)
gFS
8.0
10
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
3500
5600
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
264
530
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
52
90
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
td(on)
29
60
ns
Rise Time
(VDD = 500 Vdc, ID = 10 Adc,
VGS = 10 Vdc
tr
57
120
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
118
240
Fall Time
RG
9.1
)
tf
70
140
Gate Charge
(See Figure 8)
QT
100
120
nC
(VDS = 400 Vdc, ID = 10 Adc,
VGS = 10 Vdc)
Q1
18.4
VGS = 10 Vdc)
Q2
33
Q3
36.7
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1.)
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.885
0.8
1.1
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
885
ns
(See Figure 14)
(I
10 Adc V
0 Vdc
ta
220
(IS = 10 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
667
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
8.0
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
13
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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