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參數(shù)資料
| 型號： | MTSF2P03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICROPAK-8 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大小： | 285K |
| 代理商： | MTSF2P03HDR2 |
MTSF2P03HD
http://onsemi.com
8
Figure 14. Maximum Rated Forward Biased
Safe Operating Area
0.1
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
1
10
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 30 V
SINGLE PULSE
TC = 25°C
10
0.1
dc
10 ms
1
100
1 ms
Figure 15. Maximum Avalanche Energy versus
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN-T
O-SOURCE
A
V
ALANCHE
ENERGY
(mJ)
0
25
50
75
100
125
600
VDD = 30 V
VGS = 10 V
IL = 3 A
L = 159 mH
150
400
200
800
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 16. Thermal Response
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
Figure 17. Diode Reverse Recovery Waveform
t, TIME (s)
100
10
1.0
D = 0.5
SINGLE PULSE
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.1
1000
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Rthja(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(
C/W)
°
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTSF3203 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM |
| MTSF3N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM |
| MTSF3N02HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 20V 6.1A 8-Pin Micro T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTSF3N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM |
| MTSF3N03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 5.7A 8-Pin SOP T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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