參數(shù)資料
型號: MTSF2P03HDR2
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: 2700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 7/12頁
文件大小: 245K
代理商: MTSF2P03HDR2
MTSF2P03HD
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
4.5 V
VGS = 10 V
TJ = 25°C
3.5 V
3.3 V
4.5 V
6 V
VGS = 10 V
2.9 V
2.7 V
I DSS
,LEAKAGE
(nA)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.5
1.5
2
0
1
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.04
Figure 5. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 7. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 8. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = –55°C
25
°C
100
°C
4
2
4
1
3.5
4
2
0.14
01
2
10
0
5
15
25
30
0.08
3
34
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 1.2 A
125
75
25
–25
VGS = 0 V
1
3
2.5
0.10
0.12
1000
25
°C
0.2
0.25
0.3
0.15
0.05
0.1
24
8
6
1
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID = 2.4 A
TJ = 25°C
0
0.06
5
4.1 V
3.9 V
3.7 V
5
1.5
4.5
35
7
5
0.1
10
3.1 V
0.5
2.5
4.5
1.5
3.5
910
0
20
100
°C
125
°C
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