參數(shù)資料
型號(hào)： MTSF1P02HDR2
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 1800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： MICRO-8
文件頁數(shù)： 6/12頁
文件大小： 283K
代理商： MTSF1P02HDR2
MTSF1P02HD
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 4)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(Cpk
≥ 2.0)
(Notes 4 & 6)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
20
12.8
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
Adc
GateBody Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(Note 6)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.6
0.8
2.5
Vdc
mV/
°C
Static DraintoSource OnResistance
(Note 6)
(VGS = 4.5 Vdc, ID = 1.8 Adc)
(VGS = 2.7 Vdc, ID = 0.9 Adc)
RDS(on)
120
160
190
m
Forward Transconductance (VDS = 10 Vdc, ID = 0.9 Adc)
(Note 4)
gFS
2.0
4.0
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
10 Vd
V
0Vd
Ciss
440
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
300
Transfer Capacitance
f = 1.0 MHz)
Crss
150
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
td(on)
15
ns
Rise Time
(VDS = 10 Vdc, ID = 1.8 Adc,
tr
35
TurnOff Delay Time
(VDS
10 Vdc, ID
1.8 Adc,
VGS = 4.5 Vdc, RG = 6.0 ) (Note 4)
td(off)
55
Fall Time
tf
75
TurnOn Delay Time
td(on)
20
Rise Time
(VDD = 10 Vdc, ID = 0.9 Adc,
tr
93
TurnOff Delay Time
(VDD
10 Vdc, ID
0.9 Adc,
VGS = 2.7 Vdc, RG = 6.0 ) (Note 4)
td(off)
50
Fall Time
tf
75
Gate Charge
QT
11
22
nC
(VDS = 10 Vdc, ID = 1.8 Adc,
Q1
0.7
(VDS
10 Vdc, ID
1.8 Adc,
VGS = 4.5 Vdc)
Q2
5.5
Q3
3.8
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 1.8 Adc, VGS = 0 Vdc) (Note 4)
(IS = 1.8 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
1.24
0.9
2.0
Vdc
Reverse Recovery Time
trr
120
ns
(IS = 1.8 Adc, VGS = 0 Vdc,
ta
33
(IS
1.8 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s) (Note 4)
tb
87
Reverse Recovery Stored Charge
QRR
0.223
C
4. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
6. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
相關(guān)PDF資料
PDF描述
MTSF1P02HDR2 1800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MTSF2P02HDR2 3000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MTSF2P02HDR2 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTSF2P02HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM
MTSF2P03HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM
MTSF2P03HDR2 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 4.1A 8-Pin SOP T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述:MOSFET Transistor, P-Channel, SO 制造商:ON Semiconductor 功能描述:MOSFET Transistor, P-Channel, SO 制造商:MOTOROLA 功能描述:
MTSF3203 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM
MTSF3N02HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM
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