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參數(shù)資料
| 型號： | MTP5P06V |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 79K |
| 代理商： | MTP5P06V |
MTP5P06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
0
1
23
45
0
7
2
4
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
7
8
23
4
8
0
1
2
3
6
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1
2
34
56
0.2
0.25
0.3
0.35
0.6
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
1
2
345
7
0.2
8
0.25
0.3
0.4
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
-50
1.8
0.2
0.4
0.6
010
20
30
40
1
50
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 125°C
15 V
-25
0
25
50
75
100
150
TJ = 25°C
VDS ≥ 10 V
TJ = -55°C
25°C
100
°C
TJ = 100°C
25°C
-55°C
TJ = 25°C
VGS = 0 V
VGS = 10V
VGS = 10 V
ID = 2.5 A
6
8
6
7 V
6 V
5 V
4 V
8 V
9 V
4
5
56
7
0.4
0.45
7
0.35
9
6
0.8
1
1.2
1.4
1.6
125
60
89
9
10
89
10
0.5
0.55
10
175
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