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參數(shù)資料
| 型號： | MTP52N06V |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 205K |
| 代理商： | MTP52N06V |
MTP52N06V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(Cpk ≥ 2.0) (Note 3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
66
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(Cpk ≥ 2.0) (Note 3)
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
2.7
6.4
4.0
Vdc
mV/°C
Static DrainSource OnResistance
(Cpk ≥ 2.0) (Note 3)
(VGS = 10 Vdc, ID = 26 Adc)
RDS(on)
0.019
0.022
Ohm
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 52 Adc)
(VGS = 10 Vdc, ID = 26 Adc, TJ = 150°C)
VDS(on)
1.4
1.2
Vdc
Forward Transconductance (VDS = 6.3 Vdc, ID = 20 Adc)
gFS
17
24
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1900
2660
pF
Output Capacitance
Coss
580
810
Reverse Transfer Capacitance
Crss
150
300
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 52 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
12
20
ns
Rise Time
tr
298
600
TurnOff Delay Time
td(off)
70
140
Fall Time
tf
110
220
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 52 Adc,
VGS = 10 Vdc)
QT
125
175
nC
Q1
10
Q2
30
Q3
40
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 52 Adc, VGS = 0 Vdc)
(IS = 52 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
1.0
0.98
1.5
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 52 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
100
ns
ta
80
tb
20
Reverse Recovery Stored
Charge
QRR
0.341
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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