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參數(shù)資料
| 型號： | MTP52N06V |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 205K |
| 代理商： | MTP52N06V |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 5
1
Publication Order Number:
MTP52N06V/D
MTP52N06V
Preferred Device
Power MOSFET
52 Amps, 60 Volts
NChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 25
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp ≤ 10 μs)
ID
IDM
52
41
182
Adc
Apk
Total Power Dissipation
Derate above 25°C
PD
188
1.25
Watts
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 52 Apk, L = 0.3 mH, RG = 25 Ω)
EAS
406
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
RθJC
RθJA
0.8
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
TL
260
°C
52 AMPERES
60 VOLTS
RDS(on) = 22 mΩ
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP52N06V
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP52N06V
= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP52N06V
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTP52N06VL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM |
| MTP55N06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
| MTP55N06Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
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