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參數(shù)資料
| 型號： | MTP3N120E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 181K |
| 代理商： | MTP3N120E |
MTP3N120E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
1.0
0.1
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
t, TIME (s)
120
100
40
0
25
50
75
100
125
150
100
10
1.0
0.1
1.0
10
100
1,000
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
Figure 13. Thermal Response
ID = 3 A
80
60
20
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
1.0E–01
1.0E+00
1.0E+01
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
0.02
10,000
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25°C
100
s
1 ms
r(t),
NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
10
s
dc
10 ms
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP3N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
| MTP3N35 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 350-400 V |
| MTP3N40 | 制造商:n/a 功能描述:3N40 S8H2A |
| MTP3N50 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
| MTP3N50E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB 制造商:UNBRANDED 功能描述:MOSFET, N TO-220 |
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