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參數(shù)資料
| 型號： | MTP3N120E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 181K |
| 代理商： | MTP3N120E |
MTP3N120E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
10,000
1,000
100
10
1
0
400
600
800
1000
2.5
2.0
1.5
1.0
0.5
0
– 50
– 25
0
25
50
75
100
125
150
5.4
5.0
4.6
4.2
3.8
ID, DRAIN CURRENT (AMPS)
8
6
4
0
02
4
6
5
3
1
6
0
6
12
18
24
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
0
TJ = 25°C
VGS = 10 V
VDS ≥ 10 V
VGS = 10 V
TJ = 100°C
–55
°C
TJ = 25°C
VGS = 10 V
VGS = 0 V
5
4
3
2
6
5
4
3
2
1
3.0
3.4
3.8
4.2
4.6
5.0
5.4
5.8
6.2
02
4
6
5
3
1
TJ = 125°C
1
2
200
6 V
5 V
4 V
25
°C
TJ = – 55°C
100
°C
25
°C
VGS = 10 V
ID = 1.5 A
1200
100
°C
25
°C
15 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP3N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
| MTP3N35 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 350-400 V |
| MTP3N40 | 制造商:n/a 功能描述:3N40 S8H2A |
| MTP3N50 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
| MTP3N50E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB 制造商:UNBRANDED 功能描述:MOSFET, N TO-220 |
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