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參數資料
| 型號： | MTP3055VG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | GREEN, CASE 221A-09, 3 PIN |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 202K |
| 代理商： | MTP3055VG |
MTP3055V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
65
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
2.7
5.4
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 6.0 Adc)
RDS(on)
0.10
0.15
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 150°C)
VDS(on)
1.3
2.2
1.9
Vdc
Forward Transconductance (VDS = 7.0 Vdc, ID = 6.0 Adc)
gFS
4.0
5.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
410
500
pF
Output Capacitance
Coss
130
180
Reverse Transfer Capacitance
Crss
25
50
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
7.0
10
ns
Rise Time
tr
34
60
TurnOff Delay Time
td(off)
17
30
Fall Time
tf
18
50
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
QT
12.2
17
nC
Q1
3.2
Q2
5.2
Q3
5.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
1.0
0.91
1.6
Vdc
Reverse Recovery Time
(See Figure 15)
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
56
ns
ta
40
tb
16
Reverse Recovery Stored
Charge
QRR
0.128
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數 |
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