參數(shù)資料
型號(hào): MTP3055V
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 3/7頁
文件大小: 202K
代理商: MTP3055V
MTP3055V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
01
2
3
4
5
0
8
16
24
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
24
6
8
10
0
8
16
24
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
04
8
16
24
0
0.10
0.20
0.30
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
8
20
24
0.08
0.09
0.13
0.15
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0.6
0.8
1.2
1.6
020
50
60
1
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25°C
100°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 6 A
9 V
8 V
6 V
5 V
4 V
7 V
4
12
20
35
79
4
12
20
VGS = 10 V
TJ = 100°C
25°C
55°C
12
20
4
12
16
10
30
40
0.05
0.15
0.25
0.10
0.12
0.14
0.11
1.0
1.4
TJ = 125°C
VGS = 10 V
15 V
175
相關(guān)PDF資料
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