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參數(shù)資料
| 型號(hào)： | MTP10N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
| 中文描述： | 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 237K |
| 代理商： | MTP10N10E |
1
Motorola, Inc. 1996
N–Channel Enhancement–Mode Silicon Gate
This advanced “E” series of TMOS power MOSFETs is designed
to withstand high energy in the avalanche and commutation
modes. These new energy efficient devices also offer drain–to–
source diodes with fast recovery times. Designed for low voltage,
high speed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited
for bridge circuits where diode speed and commutating safe
operating area are critical, and offer additional safety margin
against unexpected voltage transients.
Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the
Avalanche Mode — Unclamped Inductive Switching (UIS)
Energy Capability Specified at 100
°
C
Commutating Safe Operating Area (CSOA) Specified for Use
in Half and Full Bridge Circuits
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
ID
IDM
100
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
100
Vdc
±
20
Vdc
Drain Current — Continuous
Drain Current
— Pulsed
10
25
Adc
Total Power Dissipation
Derate above 25
°
C
PD
75
0.6
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–65 to 150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
°
R
θ
JC
R
θ
JA
TL
1.67
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
275
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Order this document
by MTP10N10E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FETs
10 AMPERES
100 VOLTS
RDS(on) = 0.25 OHM
D
S
G
CASE 221A–06, Style 5
TO–220AB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP12N05E | POWER FIELD EFFECT TRANSISTOR |
| MTP12N10E | TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM |
| MTP1N60E | TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM |
| MTP1N80E | TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS |
| MTP23P06V | TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP10N10EL | 功能描述:MOSFET 100V 10A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP10N10ELG | 功能描述:MOSFET 100V 10A Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP10N10M | 制造商:Motorola Inc 功能描述: |
| MTP10N15 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP10N25 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
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