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參數(shù)資料
| 型號： | MTP23P06V |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM |
| 中文描述： | 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 192K |
| 代理商： | MTP23P06V |
1
Motorola, Inc. 1996
P–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resis-
tance area product about one–half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V
On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and
TMOS E–FET
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage
— Non–repetitive (tp
≤
10 ms)
Drain Current — Continuous @ 25
°
C
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ 25
°
C
Derate above 25
°
C
60
Vdc
±
15
±
25
Vdc
Vpk
23
15
81
Adc
Apk
90
0.60
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 175
°
C
mJ
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 23 Apk, L = 3.0 mH, RG = 25
)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
794
R
θ
JC
R
θ
JA
TL
1.67
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MTP23P06V/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
23 AMPERES
60 VOLTS
RDS(on) = 0.120 OHM
Motorola Preferred Device
D
S
G
CASE 221A–06, Style 5
TO–220AB
TM
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| MTP33N10E | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTP33N10 | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTP4N80 | TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
| MTP4N80E | TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
| MTP5P06V | TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MTP23P06VG | 功能描述:MOSFET 60V 23A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP24K11 | 功能描述:插線板 1DC PANEL 11 UNWIR RoHS:否 制造商:Switchcraft 產(chǎn)品類型:Bantam (TT) 正規(guī)化: 高度/機架數(shù)量: 深度: 端接類型: 位置/觸點數(shù)量:48 |
| MTP24K11B | 功能描述:插線板 IDC PANEL 11 WIRED RoHS:否 制造商:Switchcraft 產(chǎn)品類型:Bantam (TT) 正規(guī)化: 高度/機架數(shù)量: 深度: 端接類型: 位置/觸點數(shù)量:48 |
| MTP24K7 | 功能描述:插線板 7 X 6 UNWRD IDC WA RoHS:否 制造商:Switchcraft 產(chǎn)品類型:Bantam (TT) 正規(guī)化: 高度/機架數(shù)量: 深度: 端接類型: 位置/觸點數(shù)量:48 |
| MTP2603G6 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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