- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98046 > MTDF1P02HDR2 (ON SEMICONDUCTOR) 1600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MTDF1P02HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICROPAK-8 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 137K |
| 代理商： | MTDF1P02HDR2 |
MTDF1P02HD
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0)
(Notes 2. & 4.)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
–
14
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(Notes 2. & 4.)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.7
–
0.95
2.2
1.4
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0)
(Notes 2. & 4.)
(VGS = 4.5 Vdc, ID = 1.6 Adc)
(VGS = 2.7 Vdc, ID = 0.8 Adc)
RDS(on)
–
146
220
175
280
m
Forward Transconductance (VDS = 10 Vdc, ID = 0.6 Adc)
(Note 2.)
gFS
1.3
2.0
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
15 Vd
V
0 Vd
Ciss
–
225
–
pF
Output Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
150
–
Transfer Capacitance
f = 1.0 MHz)
Crss
–
60
–
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
td(on)
–
15
–
ns
Rise Time
(VDS = 10 Vdc, ID = 1.2 Adc,
tr
–
27
–
Turn–Off Delay Time
(VDS 10 Vdc, ID 1.2 Adc,
VGS = 4.5 Vdc, RG = 6 ) (Note 2.)
td(off)
–
60
–
Fall Time
tf
–
72
–
Turn–On Delay Time
td(on)
–
20
–
ns
Rise Time
(VDD = 10 Vdc, ID = 0.6 Adc,
tr
–
94
–
Turn–Off Delay Time
(VDD 10 Vdc, ID 0.6 Adc,
VGS = 2.7 Vdc, RG = 6 ) (Note 2.)
td(off)
–
49
–
Fall Time
tf
–
76
–
Gate Charge
QT
–
5.3
7.5
nC
(VDS = 16 Vdc, ID = 1.2 Adc,
Q1
–
0.7
–
(VDS 16 Vdc, ID 1.2 Adc,
VGS = 4.5 Vdc) (Note 2.)
Q2
–
2.6
–
Q3
–
1.9
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.2 Adc, VGS = 0 Vdc) (Note 2.)
(IS = 1.2 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
–
0.89
0.72
1.1
–
Vdc
Reverse Recovery Time
(I
12Ad
V
0Vd
trr
–
86
–
ns
(IS = 1.2 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (Note 2.)
ta
–
27
–
dIS/dt = 100 A/s) (Note 2.)
tb
–
59
–
Reverse Recovery Storage Charge
QRR
–
0.115
–
C
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTDF2N06HDR2 | 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF2N06HD | 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTM23224 | 1200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTM24N50E | 24 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| MHM25N10HX | 25 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTDF2N06HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: |
| MTD-H5 | 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:QuickCarrier? USB-D 零件狀態(tài):Not Recommended For New Designs 功能:收發(fā)器，HSPA，調(diào)制解調(diào)器 調(diào)制或協(xié)議:HSPA+ 頻率:850MHz，900MHz，1.7GHz，1.9GHz，2.1GHz 應(yīng)用:- 接口:USB 靈敏度:- 功率 - 輸出:- 數(shù)據(jù)速率（最大值）:21Mbps 特性:USB 供電 電壓 - 電源:5V，USB 標準包裝:10 |
| MTD-H5-2.0 | 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:- 零件狀態(tài):有效 功能:- 調(diào)制或協(xié)議:HSPA+ 頻率:850MHz，900MHz，1.7GHz，1.8GHz，1.9GHz，2.1GHz 應(yīng)用:通用 接口:USB 靈敏度:- 功率 - 輸出:- 數(shù)據(jù)速率（最大值）:21Mbps 特性:- 電壓 - 電源:5V 標準包裝:10 |
| MTDK1S6R | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N-CHANNEL MOSFET (dual transistors) |
| MTDK3S6R | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:ESD protected N-CHANNEL MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。