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參數(shù)資料
| 型號： | MTDF1P02HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICROPAK-8 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 137K |
| 代理商： | MTDF1P02HDR2 |
MTDF1P02HD
http://onsemi.com
7
I S
,SOURCE
CURRENT
t, TIME
Figure 13. Reverse Recovery Time (trr)
di/dt = 300 A/s
Standard Cell Density
High Cell Density
tb
trr
ta
trr
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curve (Figure
14) defines the maximum simultaneous drain–to–source
voltage and drain current that a transistor can handle safely
when it is forward biased. Curves are based upon maximum
peak junction temperature and a case temperature (TC) of
25
°C. Peak repetitive pulsed power limits are determined by
using the thermal response data in conjunction with the
procedures discussed in AN569, “Transient Thermal
Resistance – General Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 s. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) – TC)/(R
θJC).
A power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
non–linearly with an increase of peak current in avalanche
and peak junction temperature.
Although many E–FETs can withstand the stress of
drain–to–source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 13). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
Figure 14. Maximum Rated Forward Biased
Safe Operating Area
0.1
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1.0
10
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 8 V
SINGLE PULSE
TC = 25°C
10
0.1
dc
10 ms
1.0
100
1 ms 100
s
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
AV
ALANCHE
ENERGY
(mJ)
0
25
50
75
100
125
120
VDD = 20 V
VGS = 4.5 V
IL = 3.6 Apk
L = 25 mH
150
80
40
160
Figure 15. Maximum Avalanche Energy versus
Starting Junction Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTDF2N06HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: |
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| MTD-H5-2.0 | 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:- 零件狀態(tài):有效 功能:- 調(diào)制或協(xié)議:HSPA+ 頻率:850MHz，900MHz，1.7GHz，1.8GHz，1.9GHz，2.1GHz 應(yīng)用:通用 接口:USB 靈敏度:- 功率 - 輸出:- 數(shù)據(jù)速率（最大值）:21Mbps 特性:- 電壓 - 電源:5V 標(biāo)準(zhǔn)包裝:10 |
| MTDK1S6R | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N-CHANNEL MOSFET (dual transistors) |
| MTDK3S6R | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:ESD protected N-CHANNEL MOSFET |
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