參數(shù)資料
型號: MTD5P06V1
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: CASE 369D-01, DPAK-3
文件頁數(shù): 3/8頁
文件大?。?/td> 150K
代理商: MTD5P06V1
MTD5P06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
0
1
23
45
0
7
2
4
10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
7
8
23
4
8
0
1
2
3
6
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1
2
34
56
0.2
0.25
0.3
0.35
0.6
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
1
2
345
7
0.2
8
0.25
0.3
0.4
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
1.8
0.2
0.4
0.6
010
20
30
40
1
50
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 125°C
15 V
25
0
25
50
75
100
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25
°C
100°C
TJ = 100°C
25
°C
55
°C
TJ = 25°C
VGS = 0 V
VGS = 10V
VGS = 10 V
ID = 2.5 A
6
8
6
7 V
6 V
5 V
4 V
8 V
9 V
4
5
56
7
0.4
0.45
7
0.35
9
6
0.8
1
1.2
1.4
1.6
125
60
89
9
10
89
10
0.5
0.55
10
175
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