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參數(shù)資料
| 型號： | MTD5P06V1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 150K |
| 代理商： | MTD5P06V1 |
MTD5P06V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
61.2
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.8
4.7
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 2.5 Adc)
RDS(on)
0.34
0.45
Ohm
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 5 Adc)
(VGS = 10 Vdc, ID = 2.5 Adc, TJ = 150°C)
VDS(on)
2.7
2.6
Vdc
Forward Transconductance
(VDS = 15 Vdc, ID = 2.5 Adc)
gFS
1.5
3.6
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
367
510
pF
Output Capacitance
Coss
140
200
Transfer Capacitance
Crss
29
60
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 5 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
11
20
ns
Rise Time
tr
26
50
TurnOff Delay Time
td(off)
17
30
Fall Time
tf
19
40
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 5 Adc,
QT
12
20
nC
Q1
3.0
Q2
5.0
Q3
5.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 5 Adc, VGS = 0 Vdc)
(IS = 5 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
1.72
1.34
3.5
Vdc
Reverse Recovery Time
(IS = 5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
97
ns
ta
73
tb
24
Reverse Recovery Stored
Charge
QRR
0.42
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD5P06VT4 | 功能描述:MOSFET 60V 5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD5P06VT4G | 功能描述:MOSFET PFET DPAK 60V 5A 450mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD5P06VT4G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MTD5P06VT4GV | 功能描述:MOSFET Single P-Ch 60V 5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6000PT | 制造商:MARKTECH 制造商全稱:Marktech Corporate 功能描述:Photo Transistor |
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