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參數(shù)資料
| 型號(hào)： | MTD4N20E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D, DPAK-3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 259K |
| 代理商： | MTD4N20E |
MTD4N20E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
I DSS
,LEAKAGE
(nA)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (AMPS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1
100
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
VDS ≥ 10 V
100°C
25°C
VGS = 10 V
55°C
25°C
50
25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125°C
TJ = 100°C
TJ = 25°C
VGS = 10 V
ID = 4 A
10
VGS = 10 V
8 V
TJ = 25°C
100°C
15 V
8
6 V
7 V
9 V
TJ = 55°C
2.5
2.0
1.5
1.0
0.5
0
5 V
7
6
5
4
3
2
1
0
14
12
10
8
6
4
2
0
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
7
6
5
4
3
2
1
08
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
7
6
5
4
3
2
1
08
VGS = 10 V
25°C
200
150
100
50
0
250
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PDF描述 |
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| MTD4N20E1 | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| MTD9N10ET4 | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD9N10E | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD9N10EG | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD4N20E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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| MTD4P06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTD5010M | 制造商:MARKTECH 制造商全稱:Marktech Corporate 功能描述:Ultra High Speed Photo Diode |
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