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參數(shù)資料
| 型號： | MTD3055VL-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 226K |
| 代理商： | MTD3055VL-1 |
MTD3055VL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
01
2
3
5
0
8
16
24
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
3.0
4.0
5.0
6.0
0
4
8
16
24
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
04
8
12
16
24
0.02
0.14
0.26
0.32
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
4
12
16
20
24
0.07
0.12
0.17
0.22
0.27
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
010
20
40
50
60
0.1
100
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
5 V
4.5 V
3 V
2.5 V
3.5 V
VGS = 5 V
TJ = 100°C
25
°C
55
°C
VDS ≥ 10 V
TJ = 55°C
25
°C
100
°C
TJ = 25°C
VGS = 0 V
TJ = 125°C
4
12
20
4
12
20
8
30
4 V
2.5
3.5
4.5
5.5
0.20
0.08
1.0
10
100
°C
VGS = 10 V
5 V
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
50
0
0.5
1.0
1.5
TJ, JUNCTION TEMPERATURE (°C)
25
0
25
50
75
100
125
150
2.0
VGS = 5 V
ID = 6 A
175
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