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| 型號： | MTD3055VL-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 226K |
| 代理商： | MTD3055VL-1 |
MTD3055VL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
62
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.6
3.0
2.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 5.0 Vdc, ID = 6.0 Adc)
RDS(on)
0.12
0.18
Ohm
DrainSource OnVoltage (VGS = 5.0 Vdc)
(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 150°C)
VDS(on)
1.6
2.6
2.5
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 6.0 Adc)
gFS
5.0
8.8
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
410
570
pF
Output Capacitance
Coss
114
160
Reverse Transfer Capacitance
Crss
21
40
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W)
td(on)
9.0
20
ns
Rise Time
tr
85
190
TurnOff Delay Time
td(off)
14
30
Fall Time
tf
43
90
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 5 Vdc)
QT
8.1
10
nC
Q1
1.8
Q2
4.2
Q3
3.8
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
0.97
0.86
1.3
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
55.7
ns
ta
37
tb
18.7
Reverse Recovery Stored
Charge
QRR
0.116
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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