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參數(shù)資料
| 型號(hào)： | MTD2955E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 210K |
| 代理商： | MTD2955E |
MTD2955E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
– 7
0
–2
– 4
– 7
– 8
–10
0
– 6
– 12
– 18
– 24
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
–2
– 6
– 8
– 10
0
– 8
– 16
– 20
– 24
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
– 4
–10
–14
– 18
– 24
0.1
0.3
0.5
0.8
0.9
0
– 6
–12
–16
– 20
– 24
0.20
0.28
0.36
0.44
0.48
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
0.8
1.6
1.8
–15
– 25
– 35
– 45
– 60
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
– 25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = – 55°C
25
°C
VGS = 10 V
– 9
– 6
– 5
– 3
–1
TJ = 100°C
25
°C
– 55
°C
TJ = 25°C
VGS = 10 V
5 V
6 V
7 V
8 V
15 V
9 V
– 4
–12
– 3
– 4
– 5
– 9
0.7
0.6
0.4
0.2
– 2
– 6 – 8
–12
–16
– 20 – 22
– 2
– 8
– 4
–14
–18
–10
0.24
0.32
0.40
– 22
1.4
1.2
1.0
– 20
– 30
– 40
– 50
– 55
VGS = 10 V
ID = 6 A
100
°C
VGS = 10 V
VGS = 0 V
100
°C
25
°C
TJ = 125°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD2955ET4 | 制造商:Motorola Inc 功能描述: |
| MTD2955V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD2955V1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Rail |
| MTD2955V-1 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955V-1G | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
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