- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96092 > MTD2955E (ON SEMICONDUCTOR) 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MTD2955E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 210K |
| 代理商： | MTD2955E |
MTD2955E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
85
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
4.0
—
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 6.0 Adc)
RDS(on)
—
0.26
0.30
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 125°C)
VDS(on)
—
4.3
3.8
Vdc
Forward Transconductance (VDS = 13 Vdc, ID = 6.0 Adc)
gFS
3.0
4.8
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
565
700
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
225
315
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
45
100
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 10 Vdc,
RG = 9.1 )
td(on)
—
9.0
20
ns
Rise Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 10 Vdc,
RG = 9.1 )
tr
—
39
80
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
17
35
Fall Time
RG = 9.1 )
tf
—
8.0
20
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
QT
—
16
32
nC
(See Figure 8)
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
Q1
—
3.0
—
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
Q2
—
6.0
—
Q3
—
5.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
2.2
1.8
3.8
—
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
100
—
ns
(See Figure 14)
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
75
—
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
—
25
—
Reverse Recovery Stored Charge
QRR
—
0.475
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD2955V | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD2N20-1 | 2 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| MTD2N50T4 | 2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| MTD4N20-1 | 4 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| MTD3055E-1 | 8 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD2955ET4 | 制造商:Motorola Inc 功能描述: |
| MTD2955V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD2955V1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Rail |
| MTD2955V-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955V-1G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。