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參數(shù)資料
| 型號(hào)： | MTD20N06VT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 221K |
| 代理商： | MTD20N06VT4 |
MTD20N06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
02
4
6
8
10
0
10
20
30
35
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
9
23
4
8
0
10
20
30
35
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
010
20
30
40
5
0
0.02
0.04
0.06
0.12
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0
10
203040
0
50
10
35
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 125°C
100
°C
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25
°C
100
°C
TJ = 100°C
25
°C
55
°C
VGS = 0 V
VGS = 10V
VGS = 10 V
40
5
7 V
6 V
5 V
4 V
8 V
9 V
40
5
56
7
0.08
0.1
35
60
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
010
20
30
40
35
0.04
0.05
0.08
ID, DRAIN CURRENT (AMPS)
15 V
TJ = 25°C
VGS = 10 V
0.06
0.07
5
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
50
0
0.25
0.5
0.75
2.0
TJ, JUNCTION TEMPERATURE (°C)
25
0
25
50
75
100
150
VGS = 10 V
ID = 10 A
1
1.25
1.5
1.75
125
175
13
57
9
15
25
15
25
0.14
0.16
0.18
15
25
0.09
0.1
0.11
15
25
5
15
20
25
30
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