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參數(shù)資料
| 型號(hào)： | MTD20N06VT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 221K |
| 代理商： | MTD20N06VT4 |
MTD20N06V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Cpk ≥ 2.0) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
69
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
—
10
100
μAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(Cpk ≥ 2.0) (3)
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.8
5.0
4.0
—
Vdc
mV/°C
Static DraintoSource OnResistance
(Cpk ≥ 2.0) (3)
(VGS = 10 Vdc, ID = 10 Adc)
RDS(on)
—
0.065
0.080
Ohm
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C)
VDS(on)
—
2.0
1.9
Vdc
Forward Transconductance (VDS = 6.0 Vdc, ID = 10 Adc)
gFS
6.0
8.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
590
830
pF
Output Capacitance
Coss
—
180
250
Reverse Transfer Capacitance
Crss
—
40
80
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
—
8.7
20
ns
Rise Time
tr
—
77
150
TurnOff Delay Time
td(off)
—
26
50
Fall Time
tf
—
46
90
Gate Charge
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
QT
—
28
40
nC
Q1
—
4.0
—
Q2
—
9.0
—
Q3
—
8.0
—
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (1)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
—
1.05
0.96
1.6
—
Vdc
Reverse Recovery Time
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
—
60
—
ns
ta
—
52
—
tb
—
8.0
—
Reverse Recovery Stored Charge
QRR
—
0.172
—
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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