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參數(shù)資料
| 型號(hào)： | MTD20N03HDL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 95K |
| 代理商： | MTD20N03HDL1 |
MTD20N03HDL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
I DSS
,LEAKAGE
(nA)
VDS, DRAINTOSOURCE VOLTAGE (Volts)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (Amps)
VDS, DRAINTOSOURCE VOLTAGE (Volts)
VGS, GATETOSOURCE VOLTAGE (Volts)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
0
0.4
0.8
1.2
1.6
2.0
0.2
0.6
1.0
1.4
1.8
0
10
20
Figure 1. OnRegion Characteristics
0
10
20
30
Figure 2. Transfer Characteristics
016
32
40
0.020
0.028
0.036
0.044
0.052
0.028
0.036
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0.6
0.8
1.0
1.2
1.8
1
1000
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
30
VGS = 10 V
8 V
6 V
2.5 V
3 V
TJ = 25°C
4 V
1.0
1.8
2.6
3.4
4.6
4.2
5.0
VDS ≥ 10 V
100
°C
25
°C
VGS = 5 V
55
°C
25
°C
016
24
32
40
0.032
0.024
50
25
0
25
50
75
100
125
150
1.4
0
6
12
24
30
18
VGS = 0 V
TJ = 125°C
TJ = 55°C
TJ = 100°C
TJ = 25°C
VGS = 5 V
10 V
VGS = 5 V
ID = 10 A
1.4
2.2
3.0
3.8
100
10
100
°C
25
°C
3.5 V
4.5 V
5 V
1.6
824
8
0.020
40
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