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參數(shù)資料
| 型號(hào)： | MTD1P50E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM |
| 中文描述： | 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | MTD1P50E |
1
Motorola, Inc. 1996
P–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
Avalanche Energy Capability Specified at Elevated
Temperature
Low Stored Gate Charge for Efficient Switching
Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor–Absorbs High Energy in the
Avalanche Mode
Source–to–Drain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
500
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage
— Single Pulse (tp
≤
50
μ
s)
500
Vdc
±
20
±
40
Vdc
Drain Current — Continuous @ TC = 25
°
C
Drain Current
— Continuous @ TC = 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
Total Power Dissipation @ TC = 25
°
C, when mounted to minimum recommended pad size
ID
ID
IDM
1.0
0.8
4.0
Adc
Apk
PD
50
0.4
1.75
Watts
W/
°
C
Watts
Operating and Storage Temperature Range
TJ, Tstg
–55 to 150
°
C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
(TJ < 150
°
C)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 3.0 Apk, L = 10 mH, RG = 25
)
EAS
45
mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (1)
R
θ
JC
R
θ
JA
R
θ
JA
TL
2.5
100
71.4
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
260
°
C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTD1P50E/D
SEMICONDUCTOR TECHNICAL DATA
CASE 369A–13, Style 2
DPAK Surface Mount
TMOS POWER FET
1.0 AMPERES
500 VOLTS
15
Motorola Preferred Device
D
S
G
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