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參數(shù)資料
| 型號： | MTD1N80ET4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 800 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 269K |
| 代理商： | MTD1N80ET4 |
MTD1N80E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
15 V
12
15
VGS = 0 V
0
200
400
1
100
300
600
500
TJ = 125°C
1000
16
14
13
10
0.4
1.2
0.8
1.6
2.0
100
°C
DI
,DRAIN
CURRENT
(AMPS)
2.0
1.2
0.8
0.4
0
5
10
15
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS = 10 V
8 V
6 V
4 V
5 V
TJ = 25°C
DI
,DRAIN
CURRENT
(AMPS)
2.0
1.2
0.8
0.4
0
2.0
2.5
3.0
3.5
4.0
6.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
–55
°C
TJ = 100°C
25
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
11
9
0
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
VGS = 10 V
ID = 0.5 A
– 50
0
50
100
150
125
– 25
25
75
2.5
2
1.5
1
0.5
0
1.6
4.5
5.0
5.5
3
9
6
0
0.50
1.0
1.50
2.0
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
TJ = 25°C
100
°C
–55
°C
18
0.25
0.75
1.25
1.75
12
15
10
700
800
0.1
25
°C
VDS ≥ 10 V
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