參數(shù)資料
型號: MTD1N50E-T4
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 4/10頁
文件大?。?/td> 267K
代理商: MTD1N50E-T4
MTD1N50E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
25
°C
TJ = 100°C
VGS = 0 V
VGS = 10 V
ID = 0.5 A
8 V
7 V
6 V
5 V
VGS = 10 V
25
°C
– 55
°C
TJ = 25°C
VGS = 10 V
15 V
TJ = 125°C
2.0
1.75
0
10
8
6
4
0
6.0
2.5
2.0
1.5
1.0
0.5
0
10000
1
0
2
4
6
8
10
12
14
16
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.5
0
0.4
0.8
1.2
1.6
2.0
0
0.25
– 50
– 25
0
25
50
75
100
125
150
0
100
200
300
500
2
5.5
5.0
4.5
4.0
3.5
3.0
100
25
°C
100
°C
1.50
1.25
1.0
0.75
0.50
0.25
2.0
1.75
0
1.50
1.25
1.0
0.75
0.50
0.25
5.5
6.0
0.50
0.75
1.0
1.25
1.50
1.75
2.0
1000
10
400
TJ = 100°C
– 55
°C
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