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參數(shù)資料
| 型號： | MTD15N06VLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 267K |
| 代理商： | MTD15N06VLT4 |
MTD15N06VL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Cpk ≥ 2.0) (Note 5)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
68
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(Cpk ≥ 2.0) (Note 5)
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
4.0
2.0
Vdc
mV/°C
Static DraintoSource OnResistance
(Cpk ≥ 2.0) (Note 5)
(VGS = 5.0 Vdc, ID = 7.5 Adc)
RDS(on)
0.075
0.085
W
DraintoSource OnVoltage
(VGS = 5.0 Vdc, ID = 15 Adc)
(VGS = 5.0 Vdc, ID = 7.5 Adc, TJ = 150°C)
VDS(on)
1.5
1.3
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 7.5 Adc)
gFS
8.0
10
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
570
880
pF
Output Capacitance
Coss
180
380
Reverse Transfer Capacitance
Crss
45
110
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W)
td(on)
11
50
ns
Rise Time
tr
150
210
TurnOff Delay Time
td(off)
27
160
Fall Time
tf
70
140
Gate Charge
(VDS = 48 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc)
QT
12
20
nC
Q1
3.0
Q2
7.0
Q3
11
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(IS = 15 Adc, VGS = 0 Vdc)
(IS = 15 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
0.96
0.85
1.6
Vdc
Reverse Recovery Time
(IS = 15 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
63
ns
ta
42
tb
21
Reverse Recovery Stored
Charge
QRR
0.140
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
5. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTD15N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) DPAK T/R |
| MTD1N40 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | 制造商:Motorola Inc 功能描述: |
| MTD1N60E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
| MTD1N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
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