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參數(shù)資料
| 型號(hào)： | MTB60N10E7LT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 100 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 182K |
| 代理商： | MTB60N10E7LT4 |
MTB60N10E7L
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Drain Current and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation
with Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
5
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
10
130
ID, DRAIN CURRENT (AMPS)
0
–25
–50
TJ, JUNCTION TEMPERATURE (°C)
2.75
1.75
0.75
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
020
10,000
100
10
1
0.1
0
I D
,DRAIN
CURRENT
(AMPS)
R
0
24
6
10
20
30
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
25
10
30
50
I DSS
,LEAKAGE
(nA)
120
1.5
0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
10
I D
,DRAIN
CURRENT
(AMPS)
0
0.5
1
5
120
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
ID, DRAIN CURRENT (AMPS)
0.020
0.015
0.010
0.005
0
R
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
TJ = 100°C
–55
°C
25
°C
TJ = 25°C
20
50
30
60
13
9
810
7
4.5
3
3.5
20
30
110
60
70
80
0.005
0.040
0.030
0.025
40
TJ = 25°C
VGS = 10 V
4 V
TJ = 100°C
25
°C
–55
°C
VGS = 10 V
5 V
VGS = 10 V
ID = 30 A
VDS ≥ 10 V
TJ = 150°C
100
°C
25
°C
4
75
100
175
125
40
70
100
80
110
90
8 V
6 V
5 V
4.5 V
3 V
3.5 V
2
2.5
40
50
60
100
70
80
90
40
50
0
100 110 120
90
0.010
0.015
0.020
0.025
0.030
0.035
130
10
20
30
60
70
80
40
50
0
100 110 120
90
150
0.25
0.50
1.50
1.00
1.25
2.50
2.00
2.25
70
60
80
100
90
110
1000
VGS = 0 V
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